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20 V, P-channel Trench MOSFET
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Rds On (Max) | Mounting Type | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Technology | Vgs (Max) | Vgs(th) (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Package / Case | Power Dissipation (Max) | Package Name | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 11.4 mOhm | Surface Mount | P-Channel | -55 °C | 150 °C | 65.1 nC | MOSFET (Metal Oxide) | 12 V | 1.25 V | 56.6 A | 10.5 A | 8-PowerVDFN | 1.8 W 50 W | MLPAK33 | 2.5 V | 4.5 V | 4200 pF | 20 V |