Catalog
Nch 80V 100A, TO-263AB, Power MOSFET
Description
AI
RJ1N04BBH is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
⌘K
Nch 80V 100A, TO-263AB, Power MOSFET
Nch 80V 100A, TO-263AB, Power MOSFET
| Part | Technology | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Gate Charge (Max) | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Operating Temperature | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) | Vgs(th) (Max) | Package Name | Drain to Source Voltage (Vdss) | Rds On (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | MOSFET (Metal Oxide) | 6 V | 10 V | 46 nC | Surface Mount | 20 V | 3280 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C | 100 A | 40 A | 89 W | 4 V | TO-263AB | 80 V | 5.3 mOhm | N-Channel |