IDW20G65 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, DUAL COMMON CATHODE, 650 V, 10 A, 15 NC
| Part | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package Name | Technology | Reverse Recovery Time (trr) | Package / Case | Capacitance | Current - Reverse Leakage | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | Through Hole | 175 °C | -55 °C | 1.7 V | 650 V | 500 mA | No Recovery Time | 500 mA 500 mA | PG-TO247-3 | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | 300 pF | 180 µA | 10 A |