IMBG65R050 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 41 A, 650 V, 0.046 OHM, TO-263
| Part | Vgs(th) (Max) | Gate Charge (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) Positive | Vgs (Max) Negative | Rds On (Max) | Technology | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 5.6 V | 22 nC | Surface Mount | 41 A | D2PAK PG-TO263-7-12 | -55 °C | 175 °C | 650 V | 790 pF | 172 W | N-Channel | 20 V | 15 V | 23 V | -7 V | 62 mOhm | SiCFET (Silicon Carbide) | 7 Leads |