TK8A10 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 100V 8A TO220SIS
| Part | Package / Case | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Operating Temperature | Drain to Source Voltage (Vdss) | Technology | FET Type | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Package Name | Mounting Type | Gate Charge (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 120 mOhm | 8 A | 150 °C | 100 V | MOSFET (Metal Oxide) | N-Channel | 530 pF | 18 W | TO-220SIS | Through Hole | 12.9 nC | 10 V | 20 V | 4 V |