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50 V, dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, dual N-channel Trench MOSFET
50 V, dual N-channel Trench MOSFET
| Part | Technology | Package Name | Mounting Type | Package / Case | Rds On (Max) | Channel Count | Configuration | Configuration - Features | Power - Max (Tc) | Power - Max (Ta) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 6-TSSOP | Surface Mount | 6-TSSOP SC-88 SOT-363 | 1.8 Ohm | 2 | N-Channel | Dual | 860 mW | 280 mW | 1 nC 1 nC | -55 °C | 150 °C | 50 V | 20.5 pF | 300 mA | 480 mA | 950 mV |