Catalog
30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Mounting Type | Vgs(th) (Max) | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Package Name | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Package / Case | Power Dissipation (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 2.5 V | P-Channel | 10 V | 4.5 V | 11 nC | -55 °C | 150 °C | 2.4 A | DFN1010D-3 | MOSFET (Metal Oxide) | 30 V | 309 pF | 120 mOhm | 3-XDFN Exposed Pad | 8.3 W 400 mW | 20 V |