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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Max) | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Technology | Package / Case | Mounting Type | Vgs(th) (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 800 mA | -55 °C | 150 °C | 2.2 W 370 mW | 8 V | 0.31 nC | N-Channel | 20 V | 21.3 pF | MOSFET (Metal Oxide) | 3-XFDFN | Surface Mount | 950 mV | DFN0606-3 |