IMW65R Series
Manufacturer: INFINEON
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THE IMW65R030M1H COOLSIC™ MOSFET 650V IS BUILT ON A STATE-OF-THE-ART TRENCH SEMICONDUCTOR.
| Part | Package Name | Vgs(th) (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Vgs (Max) Positive | Vgs (Max) Negative | Input Capacitance (Ciss) (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Rds On (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | PG-TO247-3-41 | 5.7 V | N-Channel | 18 V | Through Hole | 58 A | 20 V | -2 V | 1643 pF | SiCFET (Silicon Carbide) | -55 °C | 175 °C | 197 W | 650 V | 48 nC | 42 mOhm | TO-247-3 |