20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Gate Charge (Max) | Package Name | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) | Channel Count | Configuration | Configuration - Features | Power - Max | Package / Case | Mounting Type | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2.1 nC | DFN1010B-6 | 20 V | 500 mA | 2 | P-Channel | Dual | 380 mW | 6-XFDFN Exposed Pad | Surface Mount | 950 mV | 43 pF | 1.4 Ohm | MOSFET (Metal Oxide) | -55 °C | 150 °C |