DCK10I1200PA Series

SiC Diode in TO220-2L

Catalog

SiC Diode in TO220-2L

Part	Package Name	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Capacitance	Mounting Type	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Current - Reverse Leakage	Package / Case	Reverse Recovery Time (trr)	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)
LITTELFUSE DCK10I1200PA	TO-220-2	1.7 V	1200 V	575 pF	Through Hole	500 mA	No Recovery Time	500 mA 500 mA	100 µA	TO-220-2	0 ns	SiC (Silicon Carbide) Schottky	28 A	175 °C	-55 °C

Catalog

SiC Diode in TO220-2L

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.