IMW65R027 Series
Manufacturer: INFINEON
Beta
⌘K
COOLSIC™ MOSFET TECHNOLOGY LEVERAGES THE STRONG PHYSICAL CHARACTERISTICS OF SILICON CARBIDE, ADDING UNIQUE FEATURES WHICH INCREASE THE DEVICE PERFORMANCE, ROBUSTNESS, AND EASE OF USE.
| Part | Technology | Vgs (Max) Negative | Vgs (Max) Positive | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Package Name | Rds On (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | FET Type | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiCFET (Silicon Carbide) | -5 V | 23 V | 189 W | -55 °C | 150 °C | 2131 pF | PG-TO247-3-41 | 34 mOhm | Through Hole | 47 A | N-Channel | 5.7 V | 650 V | 62 nC | TO-247-3 | 18 V |