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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package Name | Qualification | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Vgs (Max) | Gate Charge (Max) | Vgs(th) (Max) | Mounting Type | Grade | Technology | FET Type | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-TSOP | AEC-Q101 | 20 V | SC-74 SOT-457 | 33 mOhm | -55 °C | 175 °C | 5.4 A | 12 V | 16 nC | 1.3 V | Surface Mount | Automotive | MOSFET (Metal Oxide) | P-Channel | 1025 pF | 7.5 W 660 mW | 2.5 V | 8 V |