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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package / Case | Mounting Type | Rds On (Max) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs(th) (Max) | FET Type | Input Capacitance (Ciss) (Max) | Technology | Vgs (Max) | Power Dissipation (Max) | Package Name | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 8-PowerVDFN | Surface Mount | 8.3 mOhm 8.3 mOhm | 91.8 nC | -55 °C | 150 °C | 2.5 V | 4.5 V | 1.25 V | P-Channel | 6200 pF | MOSFET (Metal Oxide) | 12 V | 1.8 W 50 W | MLPAK33 | 65.1 A | 12.4 A | 20 V |