2N7000RLRPG
ObsoleteN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 200MA, 5 Ω
2N7000RLRPG
ObsoleteN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 200MA, 5 Ω
Description
General part information
2N7000RLRPG
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N7000RLRPG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 200 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 60 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Formed Leads, TO-226-3, TO-92-3 Long Body |
| Package Name | TO-92 (TO-226) |
| Power Dissipation (Max) | 350 mW |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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