DMC3032LSD-13

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Diodes Inc

MOSFET, DUAL, N/P-CH, 30V, 8.1A ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, DUAL, N/P-CH, 30V, 8.1A ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMC3032LSD-13

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	8.1 A, 7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds	404.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Complementary Pair Enhancement Mode MOSFET

Part	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	FET Feature
Diodes Inc DMC3032LSD-13	2.5 W	404.5 pF	2.1 V	N and P-Channel	Surface Mount	7 A 8.1 A	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	30 V	8-SO	9.2 nC	MOSFET (Metal Oxide)	32 mOhm	Logic Level Gate

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General part information

Complementary Pair Enhancement Mode MOSFET

Technical documentation and resources