Zenode.ai Logo
Beta
K
DMN2025UFDB-13 - U-DFN2020-6

DMN2025UFDB-13

Active
Diodes Inc

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMN2025UFDB-13 - U-DFN2020-6

DMN2025UFDB-13

Active
Diodes Inc

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2025UFDB-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]486 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackageU-DFN2020-6 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.13
20000$ 0.12
30000$ 0.11
50000$ 0.11

Description

General part information

DMN2025UFDB Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.