DMG6601LVT-7
ActiveDiodes Inc
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 OHM
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DMG6601LVT-7
ActiveDiodes Inc
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMG6601LVT-7 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8 A, 2.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 850 mW |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMG6601LVT Series
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources