STW32NM50N

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STMicroelectronics

N-CHANNEL 500 V, 0.1 OHM TYP., 22 A MDMESH(TM) II POWER MOSFET IN TO-247 PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN +18

STW32NM50N

Active

STMicroelectronics

N-CHANNEL 500 V, 0.1 OHM TYP., 22 A MDMESH(TM) II POWER MOSFET IN TO-247 PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN +18

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW32NM50N

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1973 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW32NM50N Series

N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Technology	Supplier Device Package
STMicroelectronics STW32NM50N	150 °C	1973 pF	500 V	N-Channel	62.5 nC	4 V	Through Hole	22 A	190 W	10 V	TO-247-3	25 V	MOSFET (Metal Oxide)	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.50
		30	$ 3.95
		120	$ 3.48
		510	$ 3.25
Newark	Each	1	$ 8.67
		10	$ 7.08
		25	$ 5.48
		60	$ 5.13
		120	$ 4.77
		270	$ 4.30

Description

General part information

STW32NM50N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STW32NM50N

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STW32NM50N

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Technical Specifications

STW32NM50N Series

Pricing

Description

STW32NM50N Series

Documents

Product Change Notice EN

Technical Data Sheet EN

DS9167

UM1575

TN1156

AN4337

AN4250

TN1378

AN2842

AN2344

TN1224

TN1225

Datasheet

Technical Specifications

STW32NM50N Series