IRF9332TRPBF

Obsolete

Infineon Technologies

IR MOSFET™ P-CHANNEL ; SO-8 PACKAGE; 17.5 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ P-CHANNEL ; SO-8 PACKAGE; 17.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9332TRPBF

Current - Continuous Drain (Id) @ 25°C	9.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Technology	FET Type	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IRF9332TRPBF	MOSFET (Metal Oxide)	P-Channel	20 V	2.5 W	30 V	8-SO	17.5 mOhm	-55 °C	150 °C	1270 pF	9.8 A	Surface Mount	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	41 nC	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 9.8A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources