IRFB4510PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 13.5 MOHM;

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DocumentsIR Part Numbering System Technical Data Sheet EN

IRFB4510PBF

Active

Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 13.5 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB4510PBF

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFB4510 Series

Part	Mounting Type	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFB4510PBF	Through Hole	TO-220AB	TO-220-3	13.5 mOhm	100 V	62 A	4 V	140 W	3180 pF	N-Channel	10 V	87 nC	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.54
		10	$ 1.26
		100	$ 0.98
		500	$ 0.83
		1000	$ 0.68
		2000	$ 0.64
		5000	$ 0.61
		10000	$ 0.58
Newark	Each	1	$ 1.29
		10	$ 0.91
		100	$ 0.67
		500	$ 0.57
		1000	$ 0.51
		2500	$ 0.50
		10000	$ 0.49

Description

General part information

IRFB4510 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.