AUIRFS8408-7TRR

Obsolete

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFS8408-7TRR

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	315 nC
Input Capacitance (Ciss) (Max) @ Vds	10250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CB, TO-263-7, D2PAK
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	PG-TO263-7-900
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs
Infineon Technologies AUIRFS8408	N-Channel	D2PAK	-55 °C	175 ░C	294 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	324 nC	10 V	20 V	10820 pF	195 A	1.6 mOhm	3.9 V	40 V	Surface Mount
Infineon Technologies AUIRFS8408-7TRR	N-Channel	PG-TO263-7-900	-55 °C	175 ░C	294 W	D2PAK TO-263-7 TO-263CB	MOSFET (Metal Oxide)	315 nC	10 V	20 V	10250 pF	240 A		3.9 V	40 V	Surface Mount	1 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 240A (Tc) 294W (Tc) Surface Mount PG-TO263-7-900

Technical documentation and resources