
G50N03J
ActiveGoford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

G50N03J
ActiveGoford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Description
General part information
G50N03J
N-Channel 30 V 65A (Tc) 48W (Tc) Surface Mount TO-251
Technical Specifications
Parameters and characteristics for this part
| Specification | G50N03J |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 65 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 16.6 nC |
| Input Capacitance (Ciss) (Max) | 1255 pF |
| Mounting Type | Surface Mount, Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Package Name | TO-251 |
| Power Dissipation (Max) | 48 W |
| Rds On (Max) | 7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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