CMS25N03V8A-HF

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Comchip Technology

MOSFET N-CH 30V 25A 8DFN

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Comchip Technology

MOSFET N-CH 30V 25A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	CMS25N03V8A-HF

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	21 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-PDFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET N-CH 30V 25A 8DFN

Part	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id
Comchip Technology CMS25N03V8A-HF	8-PDFN (3x3)	Surface Mount	8 nC	18 mOhm	500 pF	21 W	30 V	4.5 V, 10 V	N-Channel	8-PowerVDFN	150 °C	-50 °C	20 V	25 A	MOSFET (Metal Oxide)	2.5 V

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General part information

N-Channel 30 V 25A (Tc) 21W (Tc) Surface Mount 8-PDFN (3x3)

Technical documentation and resources

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