GHXS100B120S-D3

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SemiQ

DIODE MOD SIC 1200V 198A SOT227

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SemiQ

DIODE MOD SIC 1200V 198A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS100B120S-D3

Current - Average Rectified (Io) (per Diode)	198 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE MOD SIC 1200V 198A SOT227

Part	Supplier Device Package	Mounting Type	Diode Configuration	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Reverse Recovery Time (trr)
SemiQ GHXS100B120S-D3	SOT-227	Chassis Mount	2 Independent	No Recovery Time	200 µA	198 A	1.7 V	175 ░C	-55 C	1.2 kV	SOT-227-4, miniBLOC	SiC (Silicon Carbide) Schottky	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 198A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources