IRF7842TRPBF

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Infineon Technologies

MOSFET, N-CH, 40V, 18A, SOIC ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 40V, 18A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7842TRPBF

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.25 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package
Infineon Technologies IRF7842TRPBF	-55 °C	150 °C	2.25 V	N-Channel	2.5 W	20 V	Surface Mount	18 A	5 mOhm	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	4500 pF	MOSFET (Metal Oxide)	50 nC	40 V	8-SO

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