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SS8550DTA

SS8550DTA

Active
ON Semiconductor

1.5 A, 25 V PNP EPITAXIAL SILICON BIPLOLAR JUNCTION TRANSISTOR

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SS8550DTA

SS8550DTA

Active
ON Semiconductor

1.5 A, 25 V PNP EPITAXIAL SILICON BIPLOLAR JUNCTION TRANSISTOR

Find alt

Description

General part information

SS8550DTA

Bipolar (BJT) Transistor PNP 25 V 1.5 A 200MHz 1 W Through Hole TO-92-3

Technical Specifications

Parameters and characteristics for this part

SpecificationSS8550DTA
Current - Collector (Ic) (Max)1.5 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)160
Frequency - Transition200 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package NameTO-92-3
Power - Max1 VA
Transistor TypePNP
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

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CAD

3D models and CAD resources for this part