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IRFSL5615PBF - TO-262-3

IRFSL5615PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 42 MOHM;

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IRFSL5615PBF - TO-262-3

IRFSL5615PBF

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 42 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFSL5615PBF
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1750 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)144 W
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.63
10$ 1.35
100$ 1.08
500$ 0.97

Description

General part information

IRFSL5615 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources