TP2510N8-G

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Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

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Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	TP2510N8-G	TP2510 Series

Current - Continuous Drain (Id) @ 25°C	-	480 mA
Drain to Source Voltage (Vdss)	-	100 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
FET Type	-	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	-	125 pF
Mounting Type	-	Surface Mount
null		-
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	-	TO-243AA
Rds On (Max) @ Id, Vgs	-	3.5 Ohm
Supplier Device Package	-	TO-243AA (SOT-89)
Technology	-	MOSFET (Metal Oxide)
Vgs (Max)	-	20 V
Vgs(th) (Max) @ Id	-	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

Part	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology TP2510N8-G	Surface Mount	2.4 V	TO-243AA	3.5 Ohm	20 V	10 V	-55 °C	150 °C	P-Channel	TO-243AA (SOT-89)	MOSFET (Metal Oxide)	100 V	480 mA	125 pF
Microchip Technology TP2510N8-G

General part information

P-Channel 100 V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Technical documentation and resources