IRFB3006PBF

Active

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 270 A, 0.0021 OHM, TO-220AB, THROUGH HOLE

Search across all available documentation for this part.

Active

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 270 A, 0.0021 OHM, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3006PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	8970 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology
Infineon Technologies IRFB3006PBF	8970 pF	20 V	375 W	60 V	-55 °C	175 ░C	N-Channel	300 nC	10 V	TO-220-3	195 A	TO-220AB	2.5 mOhm	Through Hole	4 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 195A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources