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IRFR9024NTRPBF - TO252-3

IRFR9024NTRPBF

Active
Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 11 A, 0.175 OHM, TO-252AA, SURFACE MOUNT

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IRFR9024NTRPBF - TO252-3

IRFR9024NTRPBF

Active
Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 11 A, 0.175 OHM, TO-252AA, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFR9024NTRPBF
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)38 W
Rds On (Max) @ Id, Vgs175 mOhm
Supplier Device PackageTO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.94
10$ 0.77
100$ 0.60
500$ 0.50
1000$ 0.41
Digi-Reel® 1$ 0.94
10$ 0.77
100$ 0.60
500$ 0.50
1000$ 0.41
Tape & Reel (TR) 2000$ 0.39
6000$ 0.37
10000$ 0.35
NewarkEach (Supplied on Cut Tape) 1$ 1.31
10$ 0.96
25$ 0.96
50$ 0.83
100$ 0.69
250$ 0.69
500$ 0.59
1000$ 0.53

Description

General part information

IRFR9024 Series

The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.

Documents

Technical documentation and resources