2SD991K
ActiveRenesas Electronics Corporation
POWER BIPOLAR TRANSISTOR
2SD991K
ActiveRenesas Electronics Corporation
POWER BIPOLAR TRANSISTOR
Description
General part information
2SD991K
Bipolar (BJT) Transistor NPN - Darlington 300 V 6 A 50 W Through Hole TO-220AB
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SD991K |
|---|---|
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 500 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220AB |
| Power - Max | 50 VA |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available