IRFS3306TRLPBF

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Infineon Technologies

MOSFET, N-CH, 60V, 120A, TO-263

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Infineon Technologies

MOSFET, N-CH, 60V, 120A, TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3306TRLPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	4520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IRFS3306TRLPBF	230 W	120 nC	MOSFET (Metal Oxide)	10 V	D2PAK	N-Channel	-55 °C	175 ░C	4.2 mOhm	20 V	Surface Mount	60 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4520 pF	120 A

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