MJD44H11-13

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

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Diodes Inc

PWR HI VOLTAGE TRANSISTOR TO252

Technical Specifications

Parameters and characteristics for this part

Specification	MJD44H11-13

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-252 (DPAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN, 80V, 8A, TO252

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic
Diodes Inc MJD44H11-13	80 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1.5 W	-55 °C	150 °C	3 MHz	8 A	1 µA	NPN	TO-252 (DPAK)	60	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 80V, 8A, TO252

Technical documentation and resources