94-4156PBF

Obsolete

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

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Obsolete

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	94-4156PBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1996 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies 94-4156PBF	19 nC	90 W	9.5 mOhm	3 V	75 A	20 V	N-Channel	-55 °C	175 ░C	Surface Mount	1996 pF	20 V	MOSFET (Metal Oxide)	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 75A (Tc) 90W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources