RS1DLWHRVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD123W

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	RS1DLWHRVG

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-123W
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Package / Case	Capacitance @ Vr, F	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Grade	Qualification
Taiwan Semiconductor Corporation RS1DL RHG	Surface Mount	DO-219AB	10 pF	200 mA 500 ns	5 µA	150 °C	-55 °C	Sub SMA	200 V	800 mA	Standard	1.3 V	150 ns
Taiwan Semiconductor Corporation RS1DH	Surface Mount	DO-214AC SMA	10 pF	200 mA 500 ns	5 µA	150 °C	-55 °C	DO-214AC (SMA)	200 V	1 A	Standard	1.3 V	150 ns	Automotive	AEC-Q101
Taiwan Semiconductor Corporation RS1DLWHRVG	Surface Mount	SOD-123W		200 mA 500 ns	5 µA	175 ░C	-55 C	SOD-123W	200 V	1 A	Standard	1.3 V	150 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 1A Surface Mount SOD-123W

Technical documentation and resources

No documents available