RS2M-HF

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Comchip Technology

DIODE GEN PURP 1KV 2A DO214AC

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Comchip Technology

DIODE GEN PURP 1KV 2A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	RS2M-HF

Capacitance @ Vr, F	22 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

DIODE GEN PURP 1KV 2A DO214AC

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Mounting Type
Comchip Technology RS2M-HF	2 A	22 pF	5 µA	500 ns	200 mA, 500 ns	DO-214AC (SMA)	150 °C	-55 °C	1.3 V	1000 V	DO-214AC, SMA	Standard	Surface Mount

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General part information

Diode 1000 V 2A Surface Mount DO-214AC (SMA)

Technical documentation and resources