STW36NM60ND

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STMicroelectronics

MOSFET N-CH 600V 29A TO247

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STMicroelectronics

MOSFET N-CH 600V 29A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	STW36NM60ND

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2785 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 600V 29A TO247

Part	Package / Case	Qualification	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Grade	Supplier Device Package
STMicroelectronics STW36NM60ND	TO-247-3	AEC-Q101	29 A	190 W	10 V	600 V	150 °C	5 V	MOSFET (Metal Oxide)	N-Channel	80.4 nC	110 mOhm	Through Hole	25 V	2785 pF	Automotive	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 29A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources