CPW2-1200-S010B
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DIODE SILICON CARBIDE 31A DIE
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CPW2-1200-S010B
ObsoleteWolfspeed
DIODE SILICON CARBIDE 31A DIE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CPW2-1200-S010B | 
|---|---|
| Current - Average Rectified (Io) | 31 A | 
| Current - Reverse Leakage @ Vr | 200 µA | 
| Mounting Type | Surface Mount | 
| Operating Temperature - Junction [Max] | 175 ░C | 
| Operating Temperature - Junction [Min] | -55 C | 
| Package / Case | Die | 
| Reverse Recovery Time (trr) | 0 ns | 
| Speed | No Recovery Time | 
| Supplier Device Package | Die | 
| Technology | SiC (Silicon Carbide) Schottky | 
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV | 
| Voltage - Forward (Vf) (Max) @ If | 1.8 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
CPW2-1200 Series
Diode 1200 V 31A Surface Mount Die
Documents
Technical documentation and resources
No documents available