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BS250FTA - SOT-23-3

BS250FTA

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

BS250FTA - SOT-23-3

BS250FTA

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBS250FTA
Current - Continuous Drain (Id) @ 25°C90 mA
Drain to Source Voltage (Vdss)45 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)330 mW
Rds On (Max) @ Id, Vgs [Max]14 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.66
10$ 0.57
100$ 0.39
500$ 0.33
1000$ 0.28
Digi-Reel® 1$ 0.66
10$ 0.57
100$ 0.39
500$ 0.33
1000$ 0.28
Tape & Reel (TR) 3000$ 0.25
6000$ 0.24
9000$ 0.22

Description

General part information

BS250F Series

P-Channel Enhancement Mode MOSFET