TP90H050WS

Obsolete

Transphorm

GANFET N-CH 900V 34A TO247-3

Search across all available documentation for this part.

Obsolete

Transphorm

GANFET N-CH 900V 34A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	TP90H050WS

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.5 nC
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	119 W
Rds On (Max) @ Id, Vgs [Max]	63 mOhm
Supplier Device Package	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.4 V

GANFET N-CH 900V 34A TO247-3

Part	Technology	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
Transphorm TP90H050WS	GaNFET (Cascode Gallium Nitride FET)	Through Hole	4.4 V	900 V	TO-247-3	34 A	119 W	10 V	N-Channel	-55 °C	150 °C	17.5 nC	20 V	TO-247-3	980 pF	63 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 34A (Tc) 119W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available