IRFSL3206PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 3 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 3 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL3206PBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type
Infineon Technologies IRFSL3206PBF	4 V	TO-262	3 mOhm	MOSFET (Metal Oxide)	10 V	Through Hole	20 V	-55 °C	175 ░C	170 nC	6540 pF	300 W	I2PAK TO-262-3 Long Leads TO-262AA	120 A	60 V	N-Channel

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General part information

N-Channel 60 V 120A (Tc) 300W (Tc) Through Hole TO-262

Technical documentation and resources