IRFSL4127PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 22 MOHM;

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IRFSL4127PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 22 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL4127PBF

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	5380 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

IRFSL4127 Series

Part	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type
Infineon Technologies IRFSL4127PBF	Through Hole	5 V	5380 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	150 nC	200 V	I2PAK TO-262-3 Long Leads TO-262AA	72 A	22 mOhm	TO-262	375 W	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.43
		10	$ 3.65
		100	$ 2.64
		500	$ 2.52

Description

General part information

IRFSL4127 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources