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NSVBC848CLT1G

NSVBC848CLT1G

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ON Semiconductor

TRANS GP BJT NPN 30V 0.1A 300MW 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

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NSVBC848CLT1G

NSVBC848CLT1G

Active
ON Semiconductor

TRANS GP BJT NPN 30V 0.1A 300MW 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

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Description

General part information

NSVBC848CLT1G

This 100 mA, 30 V, NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVBC848CLT1G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)15 nA
DC Current Gain (hFE) (Min)200
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power - Max225 mW
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max)600 mV
Voltage - Collector Emitter Breakdown (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

    NSVBC848CLT1G | ON Semiconductor | Zenode.ai