CY15V104QSN-108SXI

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Infineon Technologies

FERROELECTRIC RAM (FRAM), 4 MBIT, 512K X 8BIT, QSPI, 108 MHZ, 1.71 V TO 1.89 V SUPPLY, SOIC-8

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CY15V104QSN-108SXI

Active

Infineon Technologies

FERROELECTRIC RAM (FRAM), 4 MBIT, 512K X 8BIT, QSPI, 108 MHZ, 1.71 V TO 1.89 V SUPPLY, SOIC-8

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY15V104QSN-108SXI

Clock Frequency	108 MHz
Memory Format	FRAM
Memory Interface	SPI - Quad I/O
Memory Organization	512 K
Memory Size	512 kb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.209 "
Package / Case [y]	5.3 mm
Supplier Device Package	8-SOIC
Technology	FRAM (Ferroelectric RAM)
Voltage - Supply [Max]	1.89 V
Voltage - Supply [Min]	1.71 V

CY15V104 Series

Part	Supplier Device Package	Mounting Type	Memory Size	Memory Format	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Package / Case	Clock Frequency	Grade	Qualification	Memory Type	Memory Organization	Technology	Package / Case [y]	Package / Case [x]
Infineon Technologies CY15V104QN-50LPXIT	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C	8 ns	8-UQFN	50 MHz	Automotive	AEC-Q100	Non-Volatile	512 K	FRAM (Ferroelectric RAM)
Infineon Technologies CY15V104QSN-108SXI	8-SOIC	Surface Mount	512 kb	FRAM	SPI - Quad I/O	1.89 V	1.71 V	85 °C	-40 °C		8-SOIC	108 MHz			Non-Volatile	512 K	FRAM (Ferroelectric RAM)	5.3 mm	0.209 "
Infineon Technologies CY15V104QI-20LPXI	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C		8-UQFN	20 MHz			Non-Volatile	512 K	FRAM (Ferroelectric RAM)
Infineon Technologies CY15V104QN-50LPXI	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C		8-UQFN	50 MHz			Non-Volatile	512 K	FRAM (Ferroelectric RAM)
Infineon Technologies CY15V104QSN-108LPXI	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI - Quad I/O	1.89 V	1.71 V	85 °C	-40 °C		8-UQFN	108 MHz			Non-Volatile	512 K	FRAM (Ferroelectric RAM)
Infineon Technologies CY15V104QSN-108LPXIT	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI - Quad I/O	1.89 V	1.71 V	85 °C	-40 °C		8-UQFN	108 MHz			Non-Volatile	512 K	FRAM (Ferroelectric RAM)
Infineon Technologies CY15V104QN-50SXIT	8-SOIC	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C	8 ns	8-SOIC	50 MHz	Automotive	AEC-Q100	Non-Volatile	512 K	FRAM (Ferroelectric RAM)	5.3 mm	0.209 "
Infineon Technologies CY15V104QN-20LPXI	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C		8-UQFN	20 MHz			Non-Volatile	512 K	FRAM (Ferroelectric RAM)
Infineon Technologies CY15V104QN-50SXI	8-SOIC	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C		8-SOIC	50 MHz	Automotive	AEC-Q100	Non-Volatile	512 K	FRAM (Ferroelectric RAM)	5.3 mm	0.209 "
Infineon Technologies CY15V104QN-20LPXIT	8-GQFN (3.23x3.28)	Surface Mount	512 kb	FRAM	SPI	1.89 V	1.71 V	85 °C	-40 °C	20 ns	8-UQFN	20 MHz	Automotive	AEC-Q100	Non-Volatile	512 K	FRAM (Ferroelectric RAM)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 28.14
		10	$ 26.46
		25	$ 25.54
		50	$ 24.73
		100	$ 21.77
		470	$ 20.54
Newark	Each	1	$ 25.98
		5	$ 25.01
		10	$ 24.04
		25	$ 23.28
		50	$ 22.73
		100	$ 22.18
		250	$ 21.63

Description

General part information

CY15V104 Series

CY15V104QSN-108SXI is a 4Mb EXCELON™ ultra ferroelectric RAM (F-RAM). This is a high-performance, 4Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories. Unlike serial flash, the CY15x104QSN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. The CY15x104QSN is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

Documents

Technical documentation and resources

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