Zenode.ai Logo
FDP14AN06LA0

FDP14AN06LA0

Obsolete
ON Semiconductor

MOSFET N-CH 60V 10A/67A TO220-3

Find alt
FDP14AN06LA0

FDP14AN06LA0

Obsolete
ON Semiconductor

MOSFET N-CH 60V 10A/67A TO220-3

Find alt

Description

General part information

FDP14AN06LA0

N-Channel 60 V 10A (Ta), 67A (Tc) 125W (Tc) Through Hole TO-220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP14AN06LA0
Current - Continuous Drain (Id) (Ta)10 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)31 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2900 pF, 2900 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)125 W
QualificationAEC-Q101
Rds On (Max)11.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources