SF33G R0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 3A DO201AD

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF33G R0G

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Mounting Type	Package / Case
Taiwan Semiconductor Corporation SF33G A0G	150 °C	-55 °C	35 ns	5 µA	DO-201AD	3 A	80 pF	200 mA 500 ns	950 mV	Standard	Through Hole	DO-201AD Axial
Taiwan Semiconductor Corporation SF33G R0G	150 °C	-55 °C	35 ns	5 µA	DO-201AD	3 A	80 pF	200 mA 500 ns	950 mV	Standard	Through Hole	DO-201AD Axial

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 150 V 3A Through Hole DO-201AD

Technical documentation and resources