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FOD817C300

FOD817C300

Active
ON Semiconductor

TRANSISTOR OUTPUT OPTOCOUPLER, 1, 5 KV, 200 %, 50 MA, DIP, 4 ROHS COMPLIANT: YES

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FOD817C300

FOD817C300

Active
ON Semiconductor

TRANSISTOR OUTPUT OPTOCOUPLER, 1, 5 KV, 200 %, 50 MA, DIP, 4 ROHS COMPLIANT: YES

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Description

General part information

FOD817C300

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Technical Specifications

Parameters and characteristics for this part

SpecificationFOD817C300
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Max)400 %
Current Transfer Ratio (Min)200 %
Fall Time (Typ)3 µs
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature (Max)110 °C
Operating Temperature (Min)-55 °C
Output TypeTransistor
Package Length0.3 in
Package Name4-DIP
Package Width7.62 mm
Rise Time (Typ)4 µs
Vce Saturation (Max)200 mV
Voltage - Forward (Vf) (Typ)1.2 V
Voltage - Isolation5000 Vrms
Voltage - Output (Max)70 V

Pricing

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CAD

3D models and CAD resources for this part