MJ14001G
ObsoleteON Semiconductor
POWER 60A 60V DISCRETE PNP
MJ14001G
ObsoleteON Semiconductor
POWER 60A 60V DISCRETE PNP
Description
General part information
MJ14001 Series
The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJ14001G |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Cutoff (Max) | 1 mA |
| DC Current Gain (hFE) (Min) | 15 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-204AE |
| Package Name | TO-204 (TO-3) |
| Power - Max | 300 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
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Documents
Technical documentation and resources