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NVMYS005N10MCLTWG

NVMYS005N10MCLTWG

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ON Semiconductor

TRANSISTOR POWER MOSFET N-CH 100V 108A 4-PIN LFPAK T/R

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NVMYS005N10MCLTWG

NVMYS005N10MCLTWG

Active
ON Semiconductor

TRANSISTOR POWER MOSFET N-CH 100V 108A 4-PIN LFPAK T/R

Find alt

Description

General part information

NVMYS005N10MCLTWG

MOSFET – Power, SingleN-Channel100 V, 5.1 mΩ, 108 A

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS005N10MCLTWG
Current - Continuous Drain (Id) (Ta)18.4 A
Current - Continuous Drain (Id) (Tc)108 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)55 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4100 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case4-LFPAK, SOT-1023
Package Length5 mm
Package NameLFPAK4
Package Width6 mm
Power Dissipation (Max)3.8 W, 131 W
QualificationAEC-Q101
Rds On (Max)5.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part